power mosfet.
rmal Impedance, Junction-to-Case www.irf.com
5
Thermal Response (Z thJC )
IRL2203NS/LPbF
15V
VDS
L
DRIVER
RG 2V0GVS
tp
D.U.T IAS
0.01Ω
+ -
VDD A
Fig 12a. Uncl.
IRL2203NSPbF IRL2203NLPbF
HEXFET® Power MOSFET D VDSS = 30V
RDS(on) = 7.0mΩ
ID = 116A
S
The D2Pak is a surface mount.
Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low onresistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET p.
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